STD85N10F7AG Datasheet, PDF (4/16 Pages) STMicroelectronics – High avalanche ruggedness

Electrical characteristics
2
Electrical characteristics
(T_C = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. Static
Test conditions
V_(BR)DSS
Drain-source
breakdown voltage
Zero gate voltage
I_{DSS drain current (VGS = 0)}
I_GSS
V_GS(th)
R_DS(on)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source
on-resistance
I_D = 250 µA, V_GS = 0
V_DS = 100 V
V_DS = 100 V, T_C=125 °C
V_GS = 20 V
V_DS = V_GS, I_D = 250 µA
I_D = 40 A, V_GS=10 V
Symbol
Parameter
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic
Test conditions
V_DS = 50 V, f = 1 MHz,
V_GS = 0
V_DD = 50 V, I_D = 70 A,
V_GS = 10 V
(see Figure 14)
STD85N10F7AG
Min. Typ. Max. Unit
100
V
1
µA
100
100 nA
2.5 3.5 4.5 V
0.0085 0.010 Ω
Min. Typ. Max. Unit
- 3100 -
-
700
-
pF
-
45
-
-
45
-
-
18
- nC
-
13
-
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V_DD = 50 V, I_D = 40 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 15 and Figure 18)
Min. Typ. Max. Unit
-
19
-
-
32
-
ns
-
36
-
-
13
-
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