STD85N10F7AG Datasheet, PDF (5/16 Pages) STMicroelectronics – High avalanche ruggedness

STD85N10F7AG
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD Source-drain current
-
70 A
I_SDM ⁽¹⁾ Source-drain current (pulsed)
-
280 A
V_SD ⁽²⁾ Forward on voltage
I_SD = 70 A, V_GS = 0
-
1.1 V
t_rr
Reverse recovery time
I_SD = 70 A, di/dt = 100 A/µs
-
70
ns
Q_rr Reverse recovery charge
V_DD = 80 V, T_j=150 °C
- 125
nC
I_RRM Reverse recovery current
(see Figure 18)
- 3.6
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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