STB80N4F6AG Datasheet, PDF (7/15 Pages) STMicroelectronics – High avalanche ruggedness

STB80N4F6AG
Figure 8: Static drain-source on-resistance
(mΩ)
Electrical characteristics
Figure 9: Normalized on-resistance vs.
temperature
Figure 10: Gate charge vs. gate-source
voltage
Figure 11: Capacitance variations
Figure 12: Source- drain diode forward characteristics
DocID027978 Rev 2
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