STB80N4F6AG Datasheet, PDF (4/15 Pages) STMicroelectronics – High avalanche ruggedness

Electrical characteristics
STB80N4F6AG
2
Electrical characteristics
(TC = 25 °C unless otherwise specified).
Table 4: On/Off States
Symbol
Parameter
Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown voltage
IDSS
Zero gate voltage drain current
(VGS= 0V)
VGS = 0 V, ID = 250 µA 40
VDS = 40 V
VDS = 40 V
Tj = 125 °C
V
1 µA
100 µA
IGSS
VGS(th)
RDS(on)
Gate-body leakage current
(VDS= 0 V)
Gate threshold voltage
Static drain-source on-resistance
VGS = ±20 V
VDS = VGS, ID = 250 µA 2
VGS = 10 V, ID= 40 A
±100 nA
4
V
5.5 6 mΩ
Symbol
Parameter
Ciss Input capacitance
Coss Output capacitance
Crss
Reverse transfer
capacitance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
Table 5: Dynamic
Test conditions
VDS = 25 V, f = 1 MHz,
VGS = 0 V
VDD = 20 V, ID = 80 A,
VGS = 10 V (see Figure 14:
"Test circuit for gate charge
behavior" )
Min. Typ. Max. Unit
- 2150 - pF
- 335 - pF
- 160 - pF
-
36
- nC
-
11
- nC
-
9
- nC
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Table 6: Switching times
Test conditions
VDD = 20 V, ID = 40 A RG = 4.7 Ω,
VGS = 10 V(see Figure 15: "Test
circuit for inductive load switching
and diode recovery times" )
Min. Typ. Max. Unit
- 10.5 -
ns
- 7.6
-
ns
- 46.1 -
ns
- 11.9 -
ns
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