STB80N4F6AG Datasheet, PDF (3/15 Pages) STMicroelectronics – High avalanche ruggedness

STB80N4F6AG
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
VDS
VGS
ID
ID
IDM⁽¹⁾
PTOT
IAV
EAS
Tstg
Tj
Drain-source voltage
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC= 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Avalanche current, repetitive or not-repetitive (pulse width
limited by TJ max)
Single pulse avalanche energy(Starting TJ= 25 °C, = ID =IAV,
VDD= 25 V)
Storage temperature
Max. operating junction temperature
Notes:
(1) _{Pulse width limited by safe operating area.}
Symbol
Rthj-case
Rthj-pcb⁽¹⁾
Table 3: Thermal data
Parameter
Thermal resistance junction-case max.
Thermal resistance junction-ambient max.
Notes:
(1)_{When mounted on FR-4 board of inch2, 2 oz Cu}
Electrical ratings
Value
Unit
40
V
± 20
V
80
A
56
A
320
A
70
W
40
A
149
mJ
- 55 to 175
°C
175
°C
Value
2.14
35
Unit
°C/W
°C/W
DocID027978 Rev 2
3/15