STB80N4F6AG Datasheet, PDF (1/15 Pages) STMicroelectronics – High avalanche ruggedness

STB80N4F6AG
Automotive-grade N-Channel 40 V, 5.5 mΩ typ.,80 A
STripFET™ F6 Power MOSFET in a D²PAK package
Datasheet - production data
TAB
3
1
D2PAK
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STB80N4F6AG
VDS
40 V
RDS(on) max.
6 mΩ
ID
80 A
 Designed for automotive applications and
AEC-Q101 qualified
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
Applications
 Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
S(3)
Order code
STB80N4F6AG
AM01475v1_Tab
Table 1: Device summary
Marking
Package
80N4F6
D²PAK
Packaging
Tape and Reel
November 2015
DocID027978 Rev 2
This is information on a product in full production.
1/15
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