STB80N4F6AG Datasheet, PDF (5/15 Pages) STMicroelectronics – High avalanche ruggedness

STB80N4F6AG
Symbol
ISD
ISDM⁽¹⁾
VSD⁽²⁾
trr
QRR
IRRM
Parameter
Table 7: Source-drain diode
Test conditions
Source drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 40 A, VGS= 0 V
ISD= 80 A, di/dt = 100 A/μs,
VDD= 32 V
(See Figure 17: "Unclamped
inductive waveform")
Electrical characteristics
Min. Typ. Max. Unit
80 A
320 A
1.3 V
41.1
ns
43.6
nC
2.1
A
Notes:
(1)_{Pulse width limited by safe operating area.}
(2)_{Pulsed: pulse duration = 300 μs, duty cycle 1.5%}
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