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STB80N4F6AG Datasheet, PDF (6/15 Pages) STMicroelectronics – High avalanche ruggedness
Electrical characteristics
STB80N4F6AG
2.1
Electrical characteristics (curves)
Figure 2: Safe operating area
ID
(A)
100
Opelimraittieodn
in
by
tmhiasxaRreDaSi(son)
100µs
10
1
0.1
0.1
Tj=175°C
Tc=25°C
Single
pulse
1ms
10ms
1
10
VDS(V)
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
S
GIPD160609102015RV
VDS= 2V
Figure 6: Normalized gate threshold voltage
vs. temperature
1 23 45 6 789
Figure 7: Normalized V(BR)DSS vs.
temperature
GIPD160620150918RV
ID = 250 μA
6/15
DocID027978 Rev 2