EF9345 Datasheet, PDF (4/38 Pages) STMicroelectronics – HMOS2 SINGLE CHIP SEMI-GRAPHIC DISPLAY PROCESSOR

EF9345
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC*
V_in*
T_A
T_stg
PDm
Supply Voltage
Input Voltage
Operating Temperature
Storage Temperature
Maximum Power Dissipation
-0.3, 7.0
V
-0.3, 7.0
V
0, +70
o_C
-55, +150
o_C
0.75
W
* With respect to Vss.
Stresses above those hereby listed may cause permanent damage to the device. The ratings are stress ones only and functional operation of
the device at these or any conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to maximum
rating conditions for extended periods may affect reliability. Standard MOS circuits handling procedure should be used to avoid possible damage
to the device.
ELECTRICAL CHARACTERISTICS
VCC = 5.0V ±5%, VSS = 0V, TA = 0 to +70°C, unless otherwise specified.
Symbol
V_CC
V_IL
VIH
IIN
V_OH
VOL
P_D
CIN
I_TSI
Parameter
Supply Voltage
Input Low Voltage
Input High Voltage : CLK
Other Inputs
Input Leakage Current
Output High Voltage (Iload = -500µA)
Output Low Voltage : Iload = 4mA ; AD(0:7), ADM(0:7), AM(8:13)
Iload = 1mA ; Other Outputs
Power Dissipation
Input Capacitance
Three State (Off State) Input Current
Min. Typ. Max. Unit
4.75
5
5.25
V
-0.3
0.8
V
2.2
VCC
V
2
VCC
10
µA
2.4
V
0.4
V
0.4
250
mW
15
pF
10
µA
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