STM32W108C8 Datasheet, PDF (245/275 Pages) –

STM32W108C8
Electrical characteristics
14.2
Absolute maximum ratings
Stresses above the absolute maximum ratings listed in Table 44: Voltage characteristics,
Table 45: Current characteristics, and Table 46: Thermal characteristics may cause
permanent damage to the device. These are stress ratings only and functional operation of
the device at these conditions is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Table 44. Voltage characteristics
Ratings
Min.
Regulator input voltage (VDD_PADS)
-0.3
Analog, Memory and Core voltage (VDD_24MHZ, VDD_VCO,
VDD_RF, VDD_IF, VDD_PADSA, VDD_MEM, VDD_PRE,
-0.3
VDD_SYNTH, VDD_CORE)
Voltage on RF_P,N; RF_TX_ALT_P,N
-0.3
RF Input Power (for max level for correct packet reception see
Table 65: Receive characteristics)
–
RX signal into a lossless balun
Voltage on any GPIO (PA[7:0], PB[7:0], PC[7:0]), SWCLK,
NRST, VREG_OUT
-0.3
Voltage on BIAS_R, OSC_OUT, OSC_IN
-0.3
Max.
+3.6
+2.0
+3.6
+15
Unit
V
V
V
dBm
VDD_PADS +0.3 V
VDD_PADSA +0.3 V
Symbol
I_VDD
I_VSS
I_IO
I_INJ(PIN)
ΣI_INJ(PIN)
Table 45. Current characteristics
Ratings
Total current into V_DD/V_DDA power lines (source)
Total current out of V_SS ground lines (sink)
Output current sunk by any I/O and control pin
Output current source by any I/Os and control pin
Injected current on NRST pin
Injected current on HSE OSC_IN and LSE OSC_IN pins
Injected current on any other pin
Total injected current (sum of all I/O and control pins)
Max.
Unit
150
150
25
− 25
mA
±5
±5
±5
± 25
Table 46. Thermal characteristics
Symbol
Ratings
Value
Unit
T_STG
T_J
Storage temperature range
Maximum junction temperature
–40 to +140
°C
150
°C
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