SSM4501GM Datasheet, PDF (9/12 Pages) Silicon Standard Corp. – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM4501GM
P-Channel
6
5
4
3
2
1
0
25
50
75
100
125
150
T _c , Case Temperature ( ^o C)
Fig 5. Maximum Drain Current v.s.
Case Temperature
2.4
1.8
1.2
0.6
0
0
50
100
150
T _c ,Case Temperature ( ^o C)
Fig 6. Typical Power Dissipation
100
10
1
0.1
T _C =25 ^o C
Single Pulse
0.01
0.1
1
10
-V _DS (V)
1ms
10ms
100ms
1s
10s
DC
100
Fig 7. Maximum Safe Operating Area
1
Duty Factor = 0.5
0.2
0.1
0.1
0.05
0.01
0.02
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=195^oC/W
0.001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 8. Effective Transient Thermal Impedance
08/17/2007 Rev.1.00
www.SiliconStandard.com
9