SSM4501GM Datasheet, PDF (5/12 Pages) Silicon Standard Corp. – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM4501GM
N-Channel
8
6
4
2
0
25
50
75
100
125
150
T _c , Case Temperature ( ^oC)
Fig 5. Maximum Drain Current v.s.
Case Temperature
2.4
1.8
1.2
0.6
0
0
50
100
150
T _c ,Case Temperature ( ^oC)
Fig 6. Typical Power Dissipation
100
10
1ms
1
0.1
T _C =25 ^oC
Single Pulse
0.01
0.1
1
10
V _DS (V)
10ms
100ms
1s
10s
DC
100
Fig 7. Maximum Safe Operating Area
1
Duty Factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135^oC/W
1
10
100
1000
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
08/17/2007 Rev.1.00
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