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| SSM4501GM Datasheet, PDF (3/12 Pages) Silicon Standard Corp. – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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SSM4501GM
P-CH ELECTRICAL CHARACTERISTICS
@Tj=25oC (unless otherwise specified)
Symbol
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-5.3A
VGS=-4.5V, ID=-4.2A
Gate Threshold Voltage
VDS=VGS, ID=-250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
VDS=-10V, ID=-5.3A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS= ± 20V
ID=-5.3A
Gate-Source Charge
VDS=-15V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=-10V
VDS=-15V
Rise Time
Turn-off Delay Time
Fall Time
ID=-1A
RG=6Ω,VGS=-10V
RD=15Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=-15V
Reverse Transfer Capacitance
f=1.0MHz
Min. Typ. Max. Units
-30 - - V
- -0.03 - V/â
- - 50 mΩ
- - 90 mΩ
-1 - -3 V
- 8.5 - S
- - -1 uA
- - -25 uA
- - ±100 nA
- 20 - nC
- 3.5 - nC
- 2 - nC
- 12 - ns
- 20 - ns
- 45 - ns
- 27 - ns
- 790 - pF
- 440 - pF
- 120 - pF
SOURCE-DRAIN DIODE
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=-1.2V
Tj=25â, IS=-2.6A, VGS=0V
Min. Typ. Max. Units
- - -1.7 A
- - -1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135â/W when mounted on Min. copper pad.
08/17/2007 Rev.1.00
www.SiliconStandard.com
3
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