SSM4501GM Datasheet, PDF (10/12 Pages) Silicon Standard Corp. – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM4501GM
P-Channel
14
12 ^{I D =-5.3A}
10
V _DS =-10V
8
V _DS =-15V
V _DS =-20V
6
4
2
0
0
5
10
15
20
25
30
Q _G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
1000
Ciss
Coss
100
Crss
10
1
5
9
13
17
21
25
29
-V _DS (V)
Fig 10. Typical Capacitance Characteristics
100.00
10.00
T _j =150 ^o C
1.00
T _j =25 ^o C
0.10
0.01
0.1
0.4
0.7
1
1.3
-V _SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
3
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
T _j ,Junction Temperature ( ^o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
08/17/2007 Rev.1.00
www.SiliconStandard.com
10