SSM4501GM Datasheet, PDF (1/12 Pages) Silicon Standard Corp. – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM4501GM
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
PRODUCT SUMMARY
Simple Drive Requirement
Low On-resistance
Fast Switching
DESCRIPTION
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
N-CH
P-CH
BV_DSS
R_DS(ON)
I_D
BV_DSS
R_DS(ON)
I_D
The advanced power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
30V
28mΩ
7A
-30V
50mΩ
-5.3A
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
D1
D2
Pb-free; RoHS-compliant
G1
G2
ABSOLUTE MAXIMUM RATINGS
S1
S2
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient³
Rating
N-channel P-channel
30
-30
±20
±20
7
-5.3
5.8
-4.7
20
-20
2
0.016
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
08/17/2007 Rev.1.00
www.SiliconStandard.com
1