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| SSM4501GM Datasheet, PDF (2/12 Pages) Silicon Standard Corp. – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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SSM4501GM
N-CH ELECTRICAL CHARACTERISTICS
@Tj=25oC (unless otherwise specified)
Symbol
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=7A
VGS=4.5V, ID=5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=10V, ID=7A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS=±20V
ID=7A
VDS=24V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=15Ω
VGS=0V
VDS=25V
f=1.0MHz
SOURCE-DRAIN DIODE
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.2V
Tj=25â, IS=7A, VGS=0V
Min. Typ. Max. Units
30 - - V
- 0.02 - V/â
- - 28 mΩ
- - 42 mΩ
1 - 3V
- 13 - S
- - 1 uA
- - 25 uA
- - ±100 nA
- 8.4 - nC
- 2.1 - nC
- 4.7 - nC
- 6 - ns
- 5.2 - ns
- 18.8 - ns
- 4.4 - ns
- 645 - pF
- 150 - pF
- 95 - pF
Min. Typ. Max. Units
- - 1.7 A
- - 1.2 V
08/17/2007 Rev.1.00
www.SiliconStandard.com
2
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