SSM4501GM Datasheet, PDF (6/12 Pages) Silicon Standard Corp. – N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

SSM4501GM
N-Channel
12
I _D=7.0A
10000
9
V _DS= 1 6 V
1000
V _DS =20V
V _DS =24V
6
100
3
f=1.0MHz
Ciss
Coss
Crss
0
0
4
8
12
16
Q _G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
10
1
7
13
19
25
31
V _DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T _C = 150 ^o C
1
T _C =25 ^o C
0.1
0.01
0
0.4
0.8
1.2
V _SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
3
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
T _j , Junction Temperature ( ^oC )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
08/17/2007 Rev.1.00
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