S71WS512N Datasheet, PDF (7/18 Pages) SPANSION – Migrating from the S71WS512N to the S71WS512P

Application Note
4.6
Description
Page Size
Note:
Supports 8-word cache fill.
Table 4.4 Page Size Comparison
S71WS256N
4-word
S71WS512P
8-word (See Note)
Autoselect Device ID
For ease of identification, the two devices have separate device ID codes (see Table 4.5). The Device ID can
be retrieved using the Autoselect command sequence.
Table 4.5 Device ID Comparison
Description
Device ID, Word 1
Device ID, Word 2
Device ID, Word 3
Autoselect Address
(BA) + 01h
(BA) + 0Eh
(BA) + 0Fh
Read Data (S71WS512N)
227Eh
2230h
2200h
Read Data (S71WS512P)
227Eh
223Dh - Single CE
2200h
4.7 Write Buffer Programming
The S71WS512P limits the user to loading addresses starting from the minimum address in a sequential
order when using write buffer programming, while the S71WS256N is a little more flexible, allowing
addresses to be loaded non-sequentially.
4.8
CFI
Since these two devices differ in performance, device geometry and other features, some entries in their
corresponding CFI tables are different. Those entries that are different in the two devices are listed in
Table 4.6.
Table 4.6 CFI Comparison
Address
0x1Fh
0x23h
0x24h
0x27h
0x31h - 0x34h
0x45h
0x4A
0x4c
0x4f
0x52h
0x58-0x67
Description
Typical timeout per single byte/word write
Max timeout for byte/word write
Max timeout for buffer write
Device Size
Erase Block Region 2 information
Silicon Technology
Simultaneous operation; Number of sectors in all banks except boot bank
Page Mode Type
Top/Bottom Boot Sector Flag
Secured Silicon Sector (customer OTP area) size
Region Information for all banks – sectors in each bank
4.9
Summary
While the majority of the command set and features relevant to software remain consistent between the
S71WS512N and S71WS512P, users should consider the differences outlined in this application note to
ensure a smooth migration path without the need to change software.
October 3, 2006 2xWS-N_to_WS-P_AN_01E
S71WS512N to S71WS512P
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