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S71WS512N Datasheet, PDF (14/18 Pages) SPANSION – Migrating from the S71WS512N to the S71WS512P
Application Note
Table 6.5 S29WS256N Erase / Programming Performance
Parameter
JEDEC Standard
Description
tAVAV
tAVWL
tWC
Write Cycle Time
tAS
Address Setup Time
Synchronous
Asynchronous
tWLAX
tAH
Address Hold Time
Synchronous
Asynchronous
tDVWH
tWHDX
tGHWL
tWHEH
tWLWH
tWHWL
tELWL
tAVDP
tDS
tDH
tGHWL
tCAS
tCH
tWP
tWPH
tSR/W
tVID
tVIDS
tCS
tAVSW
tAVHW
tAVSC
tAVHC
tSEA
tESL
tPSL
tASP
tPSP
AVD# Low Time
Data Setup Time
Data Hold Time
Read Recovery Time Before Write
CE# Setup Time to AVD#
CE# Hold Time
Write Pulse Width
Write Pulse Width High
Latency Between Read and Write Operations
VACC Rise and Fall Time
VACC Setup Time (During Accelerated Programming)
CE# Setup Time to WE#
AVD# Setup Time to WE#
AVD# Hold Time to WE#
AVD# Setup Time to CLK
AVD# Hold Time to CLK
Sector Erase Accept Time-out
Erase Suspend Latency
Program Suspend Latency
Toggle Time During Erase within a Protected Sector
Toggle Time During Programming Within a Protected
Sector
tCSW
tWEP
Clock Setup Time to WE#
Noise Pulse Margin on WE#
54 MHz 66 MHz 80 MHz 108 MHz Unit
Min
80
—
ns
5
Min
0
—
ns
—
ns
9
Min
20
—
ns
—
Min
8
—
ns
Min 45
20
—
ns
Min
0
—
ns
Min
0
—
ns
Min
0
—
ns
Min
0
—
ns
Min
30
—
ns
Min
20
—
ns
Min
0
—
ns
Min
500
—
ns
Min
1
—
µs
Min
5
—
ns
Min
5
—
ns
Min
5
—
ns
Min
5
—
ns
Min
5
—
ns
Max
50
—
µs
Max
20
—
µs
Max
20
—
µs
Typ
0
—
µs
Typ
0
—
µs
Min
5
Max
3
—
ns
—
ns
14
S71WS512N to S71WS512P
2xWS-N_to_WS-P_AN_01E October 3, 2006