SI8220 Datasheet, PDF (9/31 Pages) Silicon Laboratories – 0.5 AND 2.5 AMP ISODRIVERS WITH OPTO INPUT (2.5, 3.75, AND 5.0 KVRMS)

Si8220/21
Table 3. Insulation and Safety-Related Specifications
Parameter
Symbol
Value
Test Condition
WB
NB
Unit
SOIC-16 SOIC-8
Nominal Air Gap (Clearance)¹
L(IO1)
8.0 min 4.9 min mm
Nominal External Tracking (Creepage)¹
L(IO2)
8.0 min 4.01 min mm
Minimum Internal Gap (Internal Clearance)
0.014 0.014 mm
Tracking Resistance
(Proof Tracking Index)
PTI
IEC60112
600
600
V
Erosion Depth
Resistance (Input-Output)²
Capacitance (Input-Output)²
Input Capacitance³
ED
0.019 0.019 mm
R_IO
10¹²
10¹²

C_IO
f = 1 MHz
2.0
1.0
pF
C_I
4.0
4.0
pF
Notes:
1. The values in this table correspond to the nominal creepage and clearance values as detailed in "12.Package Outline:
16-Pin Wide Body SOIC" on page 25, "10.Package Outline: 8-Pin Narrow Body SOIC" on page 23. VDE certifies the
clearance and creepage limits as 8.5 mm minimum for the WB SOIC-16 package and 4.7 mm minimum for the NB
SOIC-8 package. UL does not impose a clearance and creepage minimum for component level certifications. CSA
certifies the clearance and creepage limits as 3.9 mm minimum for the NB SOIC-8 and 7.6 mm minimum for the WB
SOIC-16 package.
2. To determine resistance and capacitance, the Si822x is converted into a 2-terminal device. Pins 1–8 (1–4, NB SOIC-8)
are shorted together to form the first terminal and pins 9–16 (5–8, NB SOIC-8) are shorted together to form the second
terminal. The parameters are then measured between these two terminals.
3. Measured from input pin to ground.
Rev. 1.5
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