SI8220 Datasheet, PDF (4/31 Pages) Silicon Laboratories – 0.5 AND 2.5 AMP ISODRIVERS WITH OPTO INPUT (2.5, 3.75, AND 5.0 KVRMS)

Si8220/21
1. Electrical Specifications
Table 1. Electrical Characteristics ¹
V_DD = 12 V or 15 V, V_SS = GND, T_A = –40 to +125 °C; typical specs at 25 °C.
Parameter
Symbol
Test Conditions
Min
DC Specifications
Power Supply Voltage
Input Current (ON)
Input Current Rising Edge
Hysteresis
Input Voltage (OFF)
V_DD
I_F(ON)
I_HYS
V_F(OFF)
(V_DD – V_SS)
Measured at ANODE with
respect to CATHODE.
6.5
5.0
—
–0.6
Input Forward Voltage
V_F
Output Resistance High (Source) R_OH
Measured at ANODE with
respect to CATHODE.
1.7
I_F = 5 mA.
0.5 A devices
—
2.5 A devices
—
Output Resistance Low (Sink)
R_OL
0.5 A devices
—
2.5 A devices
—
Output High Current (Source)
I_OH
(0.5 A), I_F = 0
(see Figure 2)
—
(2.5 A), I_F = 0
(see Figure 2)
—
Output Low Current (Sink)
(0.5 A), I_F = 10 mA,
(see Figure 1)
—
I_OL
(2.5 A), I_F = 10 mA,
(see Figure 1)
—
High-Level Output Voltage
(0.5 A), I _OUT = –50 mA
—
V_OH
(2.5 A), I _OUT = –50 mA
Low-Level Output Voltage
(0.5 A), I _OUT = 50 mA
—
V_OL
(2.5 A), I _OUT = 50 mA
High-Level Supply Current
Output open I_F = 10 mA
—
Low-Level Supply Current
Output open
V_F = –0.6 to +1.6 V
—
Notes:
1. VDD = 12 V for 5, 8, and 10 V UVLO devices; VDD = 15 V for 12.5 V UVLO devices.
2. See "9.Ordering Guide" on page 22 for more information.
Typ
—
—
0.5
—
—
15
2.7
5.0
1.0
0.3
1.5
0.5
2.5
V_DD–
0.5
V_DD–
0.1
200
50
1.2
1.4
Max Units
24
V
20
mA
—
mA
1.6
V
2.5
V
—
—

—
—
—
A
—
—
A
—
—
V
—
mV
—
mA
—
mA
4
Rev. 1.5