SI8220 Datasheet, PDF (5/31 Pages) Silicon Laboratories – 0.5 AND 2.5 AMP ISODRIVERS WITH OPTO INPUT (2.5, 3.75, AND 5.0 KVRMS)

Si8220/21
Table 1. Electrical Characteristics (Continued)¹
V_DD = 12 V or 15 V, V_SS = GND, T_A = –40 to +125 °C; typical specs at 25 °C.
Parameter
Symbol
Test Conditions
Min
Input Reverse Voltage
I_R = 10 mA.
BV_R
Measured at ANODE with 0.5
respect to CATHODE.
Input Capacitance
C_IN
—
VDD Undervoltage Threshold^{2 VDD}_UV+
V_DD rising
5 V Threshold
See Figure 9 on page 15. 5.20
8 V Threshold
See Figure 10 on page 15. 7.50
10 V Threshold
See Figure 11 on page 15. 9.60
12.5 V Threshold
VDD Undervoltage Threshold²
5 V Threshold
See Figure 12 on page 15. 12.4
VDD_UV–
V_DD falling
See Figure 9 on page 15. 4.90
8 V Threshold
See Figure 10 on page 15. 7.20
10 V Threshold
See Figure 11 on page 15. 9.40
12.5 V Threshold
See Figure 12 on page 15. 11.6
VDD Lockout Hysteresis
VDD Lockout Hysteresis
VDD Lockout Hysteresis
VDD_HYS
UVLO voltage = 5 V
—
VDD_HYS
UVLO voltage = 8 V
—
VDD_HYS
UVLO voltage = 10 V or
12.5 V
—
AC Specifications
Propagation Delay Time to High
Output Level
t_PLH
C_L = 200 pF
—
Propagation Delay Time to Low
Output Level
t_PHL
C_L = 200 pF
—
Output Rise and Fall Time
(0.5 A), C_L = 200 pF
—
t_R, t_F
(2.5 A), C_L = 200 pF
—
Device Startup Time
t_START
Time from
V_DD = V_{DD_UV+} to V_O
—
Common Mode
Transient Immunity
CMTI
Input ON or OFF
V_CM = 1500 V (see Figure 3)
—
Notes:
1. VDD = 12 V for 5, 8, and 10 V UVLO devices; VDD = 15 V for 12.5 V UVLO devices.
2. See "9.Ordering Guide" on page 22 for more information.
Typ
—
10
5.80
8.60
11.1
13.8
5.52
8.10
10.1
12.8
280
600
1000
—
—
—
—
—
30
Max Units
—
V
—
pF
6.30
V
9.40
V
12.2
V
14.8
6.0
V
8.70
V
10.9
V
13.8
—
mV
—
mV
—
mV
60
ns
40
ns
30
ns
20
40
µs
— kV/µs
Rev. 1.5
5