SI8220 Datasheet, PDF (12/31 Pages) Silicon Laboratories – 0.5 AND 2.5 AMP ISODRIVERS WITH OPTO INPUT (2.5, 3.75, AND 5.0 KVRMS)

Si8220/21
60
50
40
VDD = 24 V
30
20
10
0
0
50
100
150
200
Case Temperature (ºC)
Figure 5. (NB SOIC-8) Thermal Derating Curve, Dependence of Safety Limiting Values
with Case Temperature per DIN EN 60747-5-5
Table 8. Absolute Maximum Ratings¹
Parameter
Storage Temperature²
Ambient Temperature under Bias
Junction Temperature
Input Current
Driver-side Supply Voltage
Voltage on any output Pin with respect to Ground
Peak Output Current (t_PW = 10 µs, duty cycle = 0.2%)
(0.5 Amp versions)
Conditions
T_STG
T_A
T_J
IF_(AVG)
V_DD
V_O
I_OPK
Min
–65
–40
—
–100
–0.6
–0.5
—
Max
+150
+125
150
30
30
V_DD + 0.5
0.5
Units
C
C
C
mA
V
V
A
Peak Output Current (t_PW = 10 µs, duty cycle = 0.2%)
(4.0 Amp versions)
I_OPK
—
4.0
A
Lead Solder Temperature (10 s)
—
260
C
Maximum Isolation Voltage (1 s) NB SOIC-8
—
4250
V_RMS
Maximum Isolation Voltage (1 s) WB SOIC-16
—
6500
V_RMS
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to the conditions specified in the operational sections of this data sheet.
2. VDE certifies storage temperature from –40 to 150 °C.
12
Rev. 1.5