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SI570 Datasheet, PDF (5/26 Pages) Silicon Laboratories – ANY-RATE I2C PROGRAMMABLE XO/VCXO
Si570/Si571
2. Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Symbol Test Condition
Min
Typ
Max Units
3.3 V option
2.97
3.3
3.63
Supply Voltage1
VDD
2.5 V option
1.8 V option
2.25
2.5
2.75
V
1.71
1.8
1.89
Supply Current
Output enabled
LVPECL
—
120
130
CML
IDD
LVDS
—
108
117
—
99
108
mA
CMOS
—
90
98
TriState mode
—
60
75
Output Enable (OE)2
VIH
0.75 x VDD
—
—
V
VIL
—
—
0.5
Operating Temperature Range
TA
–40
—
85
ºC
Notes:
1. Selectable parameter specified by part number. See Section "7. Ordering Information" on page 21 for further details.
2. OE pin includes a 17 kΩ pullup resistor to VDD or a 17 kΩ pulldown to GND depending on the OE polarity specified in
the part number. See "7. Ordering Information" on page 21.
Table 2. VC Control Voltage Input
Parameter
Symbol Test Condition
Min
Typ
Max Units
33
45
Control Voltage Tuning Slope1,2,3
KV
VC 10 to 90% of VDD
—
90
135
—
ppm/V
180
356
Control Voltage Linearity4
BSL
–5
±1
+5
LVC
Incremental
%
–10
±5
+10
Modulation Bandwidth
BW
9.3
10.0
10.7
kHz
VC Input Impedance
Nominal Control Voltage
ZVC
VCNOM
@ fO
500
—
—
kΩ
—
VDD/2
—
V
Control Voltage Tuning Range
VC
0
VDD
V
Notes:
1. Positive slope; selectable option by part number. See "7. Ordering Information" on page 21.
2. For best jitter and phase noise performance, always choose the smallest KV that meets the application’s minimum APR
requirements. See “AN266: VCXO Tuning Slope (KV), Stability, and Absolute Pull Range (APR)” for more information.
3. KV variation is ±10% of typical values.
4. BSL determined from deviation from best straight line fit with VC ranging from 10 to 90% of VDD. Incremental slope
determined with VC ranging from 10 to 90% of VDD.
Rev. 0.3
5