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SI4770-77-A20 Datasheet, PDF (5/54 Pages) Silicon Laboratories – HIGH-PERFORMANCE CONSUMER ELECTRONICS
Si4770/77-A20
Table 2. DC Characteristics (Continued)
(TAMB = –40 to 85 °C, VA = 4.5 to 5.5 V, VD = 2.7 to 3.6 V, VIO1 = 1.7 to 3.6 V, VIO2 = 1.2 to 3.6 V)
Parameter
Symbol Test Condition
Min
Typ
Max
Interface Supplies
VIO1 Supply Current
VIO2 Supply Current
VIO1 Supply Power Down
Current*
IVIO1
IVIO2
IPD
0.1
0.5
0.82
0.1
0.2
0.5
150
250
420
VIO2 Supply Power Down
IPD
Current*
5
20
150
Inputs Pins SCL, SDA, RSTB, A0, A1
High Level Input Voltage
Low Level Input Voltage
High Level Input Current
Low Level Input Current
VIH
0.7 x VIO1
—
VIL
—
—
IIH
VIN = VI01 = 3.6 V
–10
—
IIL
VIN = 0 = V,
–10
—
VI01 = 3.6 V
—
0.3xVIO1
10
10
Input Pins DCLK, DFS
High Level Input Voltage
Low Level Input Voltage
High Level Input Current
Low Level Input Current
VIH
0.7 x VIO2
—
—
VIL
—
—
0.3 x VIO2
IIH
VIN = VI02 = 3.6 V
–10
—
10
IIL
VIN = 0 V,
–10
—
10
VI02 = 3.6 V
Input Pins GPIO1, GPIO2
High Level Input Voltage
GPIO1 and GPIO2
VIH are internally regu- 2.52
—
—
lated at 3.6 V
Low Level Input Voltage
High Level Input Current
Low Level Input Current
VIL
—
—
1.08
IIH
VIN = 3.6 V
–10
—
10
IIL
VIN = 0 V
–10
—
10
Output Pins INTB
Output is common
High Level Output Voltage
VOH
drain output with
internal 10 k pull-
0.8xVIO1
—
—
up to VIO1
Low Level Output Voltage
VOL
IOUT = –500 μA
—
—
0.2xVIO1
*Note: See "7. I2C Control Bus" on page 44.
Unit
mA
mA
µA
µA
V
V
µA
µA
V
V
µA
µA
V
V
μA
μA
V
V
Rev. 0.9
5