SLWSTK6000A Datasheet, PDF (36/80 Pages) Silicon Laboratories – ConfidentialMighty Gecko Wireless SoC EFR32MG1X232

EFR32MG1X232 Data Sheet
Electrical Characteristics
4.13 GPIO
Confidential ^Parameter
Input low voltage
Input high voltage
Output high voltage relative
to IOVDD
Symbol
V_IOIL
V_IOIH
V_IOOH
Output low voltage relative to V_IOOL
IOVDD
Input leakage current
I_IOLEAK
Input leakage current on
I_5VTOLLEAK
5VTOL pads above IOVDD
I/O pin pull-up resistor
R_PU
I/O pin pull-down resistor
R_PD
Pulse width of pulses re-
t_IOGLITCH
moved by the glitch suppres-
sion filter
Output fall time, From 70%
to 30% of V_IO
t_IOOF
Output rise time, From 30% t_IOOR
to 70% of V_IO
Table 4.24. GPIO
Test Condition
Min
Typ
Max
Unit
-
-
IOVDD*0.3 V
IOVDD*0.7
-
-
V
Sourcing 3 mA, V_DD ≥ 3 V, DRIV- IOVDD*0.8
-
ESTRENGTH¹ = WEAK
-
V
Sourcing 1.2 mA, V_DD ≥ 1.62 V, IOVDD*0.6
-
DRIVESTRENGTH¹ = WEAK
-
V
Sourcing 20 mA, V_DD ≥ 3 V, DRIV- IOVDD*0.8
-
ESTRENGTH¹ = STRONG
-
V
Sourcing 8 mA, V_DD ≥ 1.62 V,
IOVDD*0.6
-
DRIVESTRENGTH¹ = STRONG
-
V
Sinking 3 mA, V_DD ≥ 3 V, DRIV-
-
ESTRENGTH¹ = WEAK
-
IOVDD*0.2 V
Sinking 1.2 mA, V_DD ≥ 1.62 V,
-
DRIVESTRENGTH¹ = WEAK
-
IOVDD*0.4 V
Sinking 20 mA, V_DD ≥ 3 V, DRIV-
-
ESTRENGTH¹ = STRONG
-
IOVDD*0.2 V
Sinking 8 mA, V_DD ≥ 1.62 V,
-
DRIVESTRENGTH¹ = STRONG
-
IOVDD*0.4 V
GPIO ≤ IOVDD
-
0.1
TBD
nA
IOVDD < GPIO ≤ IOVDD + 2 V
-
3.3
15
µA
TBD
40
TBD
kΩ
TBD
40
TBD
kΩ
TBD
25
TBD
ns
C_L = 50pF, DRIVESTRENGTH¹ =
-
STRONG, SLEWRATE¹ = 0x6
C_L = 50pF, DRIVESTRENGTH¹ =
-
WEAK, SLEWRATE¹ = 0x6
C_L = 50pF, DRIVESTRENGTH¹ =
-
STRONG, SLEWRATE = 0x6¹
C_L = 50pF, DRIVESTRENGTH¹ =
-
TBD
TBD
TBD
TBD
-
ns
-
ns
-
ns
-
ns
WEAK, SLEWRATE¹ = 0x6
Note:
1. In GPIO_Pn_CTRL register
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