SI86XX Datasheet, PDF (28/52 Pages) Silicon Laboratories – No start-up initialization required

Si86xx
Table 11. Absolute Maximum Ratings¹
Parameter
Storage Temperature²
Ambient Temperature Under Bias
Junction Temperature
Supply Voltage
Input Voltage
Output Voltage
Output Current Drive Channel
(All devices unless otherwise stated)
Output Current Drive Channel
(All Si86xxxA-x-xx devices)
Latchup Immunity³
Symbol
T_STG
T_A
T_J
V_DD1, V_DD2
V_I
V_O
I_O
I_O
Min
–65
–40
—
–0.5
–0.5
–0.5
—
—
—
Max
Unit
150
ºC
125
ºC
150
°C
7.0
V
V_DD + 0.5
V
V_DD + 0.5
V
10
mA
22
mA
100
V/ns
Lead Solder Temperature (10 s)
—
260
ºC
Maximum Isolation (Input to Output) (1 sec)
NB SOIC-16, SOIC-8
Maximum Isolation (Input to Output) (1 sec)
WB SOIC-16
—
4500
V_RMS
—
6500
V_RMS
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to conditions as specified in the operational sections of this data sheet.
2. VDE certifies storage temperature from –40 to 150 °C.
3. Latchup immunity specification is for slew rate applied across GND1 and GND2.
28
Rev. 1.0