SI86XX Datasheet, PDF (11/52 Pages) Silicon Laboratories – No start-up initialization required

Si86xx
Table 3. Electrical Characteristics
(V_DD1 = 3.3 V±10%, V_DD2 = 3.3 V±10%, T_A = –40 to 125 °C)
Parameter
Symbol Test Condition
Min
VDD Undervoltage Threshold
VDD Undervoltage Threshold
VDD Undervoltage
Hysteresis
VDDUV+
VDDUV–
VDD_HYS
V_DD1, V_DD2 rising
V_DD1, V_DD2 falling
1.95
1.88
50
Typ
Max Unit
2.24
2.375
V
2.16
2.325
V
70
95
mV
Positive-Going Input
Threshold
VT+
All inputs rising
1.4
1.67
1.9
V
Negative-Going Input
Threshold
VT–
All inputs falling
1.0
1.23
1.4
V
Input Hysteresis
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Leakage Current
Output Impedance¹
Enable Input High Current
Enable Input Low Current
V_HYS
0.38
V_IH
2.0
V_IL
—
V_OH
loh = –4 mA
V_DD1, V_DD2 – 0.4
V_OL
lol = 4 mA
—
I_L
—
Z_O
—
I_ENH
V_ENx = V_IH
—
I_ENL
V_ENx = V_IL
—
DC Supply Current (All inputs 0 V or at supply)
0.44
—
—
3.1
0.2
—
50
2.0
2.0
0.50
V
—
V
0.8
V
—
V
0.4
V
±10
µA
—

—
µA
—
µA
Si8610Ax
VVVV_DDDDDDDD1212
VVVV^IIII
=
=
=
=
0(Ax)
0(Ax)
1(Ax)
1(Ax)
—
0.6
1.2
—
0.8
1.5
mA
—
1.8
2.9
—
0.8
1.5
Si8620Ax
VVVV_DDDDDDDD1212
VVVV^IIII
=
=
=
=
0(Ax)
0(Ax)
1(Ax)
1(Ax)
—
0.8
1.4
—
1.4
2.2
mA
—
3.3
5.3
—
1.4
2.2
Si8621Ax
VVVV_DDDDDDDD1212
VVVV^IIII
=
=
=
=
0(Ax)
0(Ax)
1(Ax)
1(Ax)
—
1.2
1.9
—
1.2
1.9
mA
—
2.4
3.8
—
2.4
3.8
Si8630Ax
V_DD1
V_DD2
V_DD1
V_DD2
V_I = 0(Ax)
V_I = 0(Ax)
V_I = 1(Ax)
V_I = 1(Ax)
—
0.9
1.6
—
—
1.9
4.6
3.0
7.4
mA
—
1.9
3.0
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of the
value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. t_PSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
Rev. 1.0
11