SI86XX Datasheet, PDF (24/52 Pages) Silicon Laboratories – No start-up initialization required

Si86xx
Table 6. Insulation and Safety-Related Specifications
Parameter
Nominal Air Gap (Clearance)¹
Symbol
L(IO1)
Value
Test Condition
WB
NB
NB
Unit
SOIC-16 SOIC-16 SOIC-8
8.0
4.9
4.9
mm
Nominal External Tracking
(Creepage)¹
L(IO2)
8.0
4.01
4.01
mm
Minimum Internal Gap
(Internal Clearance)
0.014
0.014
0.014
mm
Tracking Resistance
(Proof Tracking Index)
PTI
IEC60112
600
600
600
V_RMS
Erosion Depth
Resistance (Input-Output)²
Capacitance (Input-Output)²
Input Capacitance³
ED
0.019
0.019
0.040 ^mm
R_IO
10¹²
10¹²
10¹²

C_IO
f = 1 MHz
2.0
2.0
2.0
pF
C_I
4.0
4.0
4.0
pF
Notes:
1. The values in this table correspond to the nominal creepage and clearance values. VDE certifies the clearance and
creepage limits as 4.7 mm minimum for the NB SOIC-16 and SOIC-8 packages and 8.5 mm minimum for the WB
SOIC-16 package. UL does not impose a clearance and creepage minimum for component-level certifications. CSA
certifies the clearance and creepage limits as 3.9 mm minimum for the NB SOIC-16 and SOIC-8 and 7.6 mm minimum
for the WB SOIC-16 package.
2. To determine resistance and capacitance, the Si86xx is converted into a 2-terminal device. Pins 1–8 (Pins 1-4 for the
NB SOIC-8) are shorted together to form the first terminal and pins 9–16 (Pins 5-8 for the NB SOIC-8) are shorted
together to form the second terminal. The parameters are then measured between these two terminals.
3. Measured from input pin to ground.
Table 7. IEC 60664-1 (VDE 0844 Part 2) Ratings
Parameter
Basic Isolation Group
Installation Classification
Test Conditions
Material Group
Rated Mains Voltages < 150 V_RMS
Rated Mains Voltages < 300 V_RMS
Rated Mains Voltages < 400 V_RMS
Rated Mains Voltages < 600 V_RMS
Specification
NB SOIC-16
NB SOIC-8
WB SOIC-16
I
I
I-IV
I-IV
I-III
I-IV
I-II
I-III
I-II
I-III
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Rev. 1.0