SI86XX Datasheet, PDF (25/52 Pages) Silicon Laboratories – No start-up initialization required

Si86xx
Table 8. IEC 60747-5-2 Insulation Characteristics for Si86xxxx*
Characteristic
Parameter
Symbol
Test Condition
Maximum Working Insulation
Voltage
Input to Output Test Voltage
V_IORM
V_PR
Method b1
(V_IORM x 1.875 = V_PR, 100%
Production Test, t_m = 1 sec,
Partial Discharge < 5 pC)
WB
SOIC-16
1200
2250
NB
SOIC-16
SOIC-8
630
Unit
Vpeak
1182
Transient Overvoltage
V_IOTM
t = 60 sec
6000
6000
Vpeak
Pollution Degree
(DIN VDE 0110, Table 1)
2
2
Insulation Resistance at T_S,
V_IO = 500 V
R_S
>10⁹
>10⁹

*Note: Maintenance of the safety data is ensured by protective circuits. The Si86xxxx provides a climate classification of
40/125/21.
Table 9. IEC Safety Limiting Values¹
Max
Parameter
Symbol
Test Condition
WB
NB
SOIC-16 SOIC-16
NB
Unit
SOIC-8
Case Temperature
T_S
150
150
150
°C
Safety Input, Output,
I_S
_JA = 100 °C/W (WB SOIC-16),
220
215
160
mA
or Supply Current
105 °C/W (NB SOIC-16),
140 °C/W (NB SOIC-8),
V_I = 5.5 V, T_J = 150 °C,
T_A = 25 °C
Device Power
Dissipation²
P_D
415
415
150
mW
Notes:
1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figures 4, 5 and 6.
2. The Si86xx is tested with VDD1 = VDD2 = 5.5 V, T_J = 150 ºC, C_L = 15 pF, input a 150 Mbps 50% duty cycle square
wave.
Rev. 1.0
25