EFM8UB1 Datasheet, PDF (25/59 Pages) Silicon Laboratories – The EFM8UB1 highlighted features are listed below

EFM8UB1 Data Sheet
Electrical Specifications
4.3 Absolute Maximum Ratings
Stresses above those listed in 4.3 Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only
and functional operation of the devices at those or any other conditions above those indicated in the operation listings of this specifica-
tion is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. For more information on
the available quality and reliability data, see the Quality and Reliability Monitor Report at http://www.silabs.com/support/quality/pages/
default.aspx.
Table 4.16. Absolute Maximum Ratings
Parameter
Symbol Test Condition
Min
Ambient Temperature Under Bias
T_BIAS
-55
Storage Temperature
T_STG
-65
Voltage on VDD
V_DD
GND-0.3
Voltage on VIO²
V_IO
GND-0.3
Voltage on VREGIN
V_REGIN
GND-0.3
Voltage on D+ or D-
V_USBD
GND-0.3
Voltage on I/O pins (including VBUS / V_IN
P3.1) or RSTb
V_IO > 3.3 V
V_IO < 3.3 V
GND-0.3
GND-0.3
Total Current Sunk into Supply Pin
I_VDD
─
Total Current Sourced out of Ground I_GND
400
Pin
Current Sourced or Sunk by any I/O I_IO
Pin or RSTb
-100
Operating Junction Temperature
T_J
-40
Note:
1. Exposure to maximum rating conditions for extended periods may affect device reliability.
2. On devices without a VIO pin, V_IO = V_DD
Max
125
150
4.2
4.2
5.8
V_DD+0.3
5.8
V_IO+2.5
400
─
100
105
Unit
°C
°C
V
V
V
V
V
V
mA
mA
mA
°C
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