EFM8BB1 Datasheet, PDF (18/46 Pages) Silicon Laboratories – The EFM8BB1 highlighted features are listed below

EFM8BB1 Data Sheet
Electrical Specifications
4.3 Absolute Maximum Ratings
Stresses above those listed in Table 4.13 Absolute Maximum Ratings on page 17 may cause permanent damage to the device. This
is a stress rating only and functional operation of the devices at those or any other conditions above those indicated in the operation
listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. For
more information on the available quality and reliability data, see the Quality and Reliability Monitor Report at http://www.silabs.com/
support/quality/pages/default.aspx.
Table 4.13. Absolute Maximum Ratings
Parameter
Symbol Test Condition
Min
Max
Unit
Ambient Temperature Under Bias
T_BIAS
–55
125
°C
Storage Temperature
T_STG
–65
150
°C
Voltage on VDD
V_DD
GND–0.3
4.2
V
Voltage on I/O pins or RST
V_IN
V_DD ≥ 3.3 V
GND–0.3
5.8
V
V < 3.3 V
GND–0.3 V_DD+2.5
V
Total Current Sunk into Supply Pin
I_VDD
—
400
mA
DD
Total Current Sourced out of Ground I_GND
Pin
400
—
mA
Current Sourced or Sunk by Any I/O I_IO
Pin or RSTb
-100
100
mA
Operating Junction Temperature
T_J
–40
105
°C
Exposure to maximum rating conditions for extended periods may affect device reliability.
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