SI8410BB-D-IS Datasheet, PDF (15/30 Pages) Silicon Laboratories – LOW-POWER SINGLE AND DUAL-CHANNEL DIGITAL ISOLATORS

Si8410/20/21
Table 9. IEC 60747-5-2 Insulation Characteristics for Si84xxxB*
Parameter
Symbol
Test Condition
Characteristic Unit
Maximum Working Insulation Voltage
Input to Output Test Voltage
V_IORM
V_PR
Method b1
(V_IORM x 1.875 = V_PR, 100%
Production Test, t_m = 1 sec,
Partial Discharge < 5 pC)
560
1050
V peak
V peak
Transient Overvoltage
V_IOTM
t = 60 sec
4000
V peak
Pollution Degree (DIN VDE 0110, Table 1)
2
d ^{Insulation Resistance at TS, VIO = 500 V}
R_S
>10⁹

*Note: Maintenance of the safety data is ensured by protective circuits. The Si84xx provides a climate classification of
e _40/125/21.
nd ^{Table 10. IEC Safety Limiting Values1}
e ^s Parameter
Symbol Test Condition
Min
Typ Max Unit
n _{Case Temperature}
T_S
—
—
150 °C
mm ^{sig Safety input, output, or supply current}
o ^e _{Device Power Dissipation2}
_JA = 140 °C/W,
I_S
V_I = 5.5 V,
T_J = 150 °C,
—
—
160 mA
T_A = 25 °C
P_D
—
—
150 mW
c ^D _Notes:
e ^{1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figure 2.}
2. The Si841x/2x is tested with VDD1 = VDD2 = 5.5 V, TJ = 150 °C, CL = 15 pF, input a 150 Mbps 50% duty cycle square
Not ^{Rfor New wave.}
Rev. 1.5
15