SI8410BB-D-IS Datasheet, PDF (14/30 Pages) Silicon Laboratories – LOW-POWER SINGLE AND DUAL-CHANNEL DIGITAL ISOLATORS

Si8410/20/21
Table 7. Insulation and Safety-Related Specifications
Parameter
Nominal Air Gap (Clearance)¹
Nominal External Tracking (Creepage)¹
Symbol
L(IO1)
L(IO2)
Test Condition
Value Unit
4.9
mm
4.01
mm
Minimum Internal Gap (Internal Clearance)
0.008 mm
Tracking Resistance
(Proof Tracking Index)
PTI
IEC60112
600
V_RMS
Erosion Depth
ED
0.040 mm
Resistance (Input-Output)²
d _{Capacitance (Input-Output)2}
e _{Input Capacitance}3
R_IO
C_IO
f = 1 MHz
C_I
10¹²

1.0
pF
4.0
pF
d Notes:
1. The values in this table correspond to the nominal creepage and clearance values as detailed in "6. Package Outline:
n _{s 8-Pin Narrow Body SOIC" on page 26. VDE certifies the clearance and creepage limits as 4.7 mm minimum for the NB}
SOIC-8 package. UL does not impose a clearance and creepage minimum for component level certifications. CSA
e _{n certifies the clearance and creepage limits as 3.9 mm minimum for the NB SOIC-8 package.}
2. To determine resistance and capacitance, the Si84xx is converted into a 2-terminal device. Pins 1–4 are shorted
m _ig together to form the first terminal and pins 5–8 are shorted together to form the second terminal. The parameters are
then measured between these two terminals.
m ^{s 3. Measured from input pin to ground.}
o ^e _{Table 8. IEC 60664-1 (VDE 0844 Part 2) Ratings}
c ^D _Parameter
e _{Basic Isolation Group}
Not ^{Rfor New Installation Classification}
Test Condition
Material Group
Rated Mains Voltages < 150 V_RMS
Rated Mains Voltages < 300 V_RMS
Rated Mains Voltages < 400 V_RMS
Rated Mains Voltages < 600 V_RMS
Specification
I
I-IV
I-III
I-II
I-II
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Rev. 1.5