S-8241ABKMC-GBKT2G Datasheet, PDF (17/39 Pages) Seiko Instruments Inc – BATTERY PROTECTION IC FOR 1-CELL PACK

Rev.9.1_00
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8241 Series
(5) Test Condition 5, Test Circuit 1
(Internal resistance between VM and VDD, Internal resistance between VM and VSS)
Set V1 = 1.8 V and V2 = 0 V under overdischarge condition. Measure current I_VM flowing through VM pin. 1.8V / |I_VM|
gives the internal resistance (R_VMD) between VM and VDD.
Set V1 = V2 = 3.5 V under overcurrent condition. Measure current I_VM flowing through VM pin. 3.5 V / |I_VM| gives the
internal resistance (R_VMS) between VM and VSS.
(6) Test Condition 6, Test Circuit 1
(CO pin H resistance, CO pin L resistance)
Set V1 = 3.5 V, V2 = 0 V and V3 = 3.0 V under normal condition. Measure current I_CO flowing through CO pin. 0.5 V /
|I_CO| is the CO pin H resistance (R_COH).
Set V1 = 4.5 V, V2 = 0 V and V3 = 0.5 V under overcharge condition. Measure current I_CO flowing through CO pin. 0.5
V / |I_CO| is the CO pin L resistance (R_COL).
(7) Test Condition 7, Test Circuit 1
(DO pin H resistance, DO pin L resistance)
Set V1 = 3.5 V, V2 = 0 V and V4 = 3.0 V under normal condition. Measure current I_DO flowing through DO pin. 0.5 V /
|I_DO| gives the DO pin H resistance (R_DOH).
Set V1 = 1.8 V, V2 = 0 V and V4 = 0.5 V under overdischarge condition. Measure current I_DO flowing through DO pin.
0.5 V / |I_DO| gives the DO pin L resistance (R_DOL).
(8) Test Condition 8, Test Circuit 1
(Overcharge detection delay time, Overdischarge detection delay time)
Set V1 = 3.5 V and V2 = 0 V under normal condition. Increase V1 gradually to overcharge detection voltage V_CU - 0.2 V
and increase V1 to the overcharge detection voltage V_CU + 0.2 V momentarily (within 10 μs). The time after V1 becomes
the overcharge detection voltage until V_CO goes "L" is the overcharge detection delay time (t_CU).
Set V1 = 3.5 V and V2 = 0 V under normal condition. Decrease V1 gradually to overdischarge detection voltage V_DL +
0.2 V and decrease V1 to the overdischarge detection voltage V_DL - 0.2 V momentarily (within 10 μs). The time after V1
becomes the overdischarge detection voltage V_DL until V_DO goes "L" is the overdischarge detection delay time (t_DL).
(9) Test Condition 9, Test Circuit 1
(Overcurrent 1 detection delay time, Overcurrent 2 detection delay time, Load short-circuiting detection delay
time, Abnormal charge current detection delay time)
Set V1 = 3.5 V and V2 = 0 V under normal condition. Increase V2 from 0 V to 0.35 V momentarily (within 10 μs). The
time after V2 becomes overcurrent 1 detection voltage (V_IOV1) until V_DO goes "L" is overcurrent 1 detection delay time
(t_IOV1).
Set V1 = 3.5 V and V2 = 0 V under normal condition. Increase V2 from 0 V to 0.7 V momentarily (within 1 μs). The time
after V2 becomes overcurrent 1 detection voltage (V_IOV1) until V_DO goes "L" is overcurrent 2 detection delay time (t_IOV2).
Caution The overcurrent 2 detection delay time starts when the overcurrent 1 is detected, since the delay
circuit is common.
Set V1 = 3.5 V and V2 = 0 V under normal condition. Increase V2 from 0 V to 3.0 V momentarily (within 1 μs). The time
after V2 becomes the load short-circuiting detection voltage (V_SHORT) until V_DO goes "L" is the load short-circuiting
detection delay time (t_SHORT).
Set V1 = 3.5 V and V2 = 0 V under normal condition. Decrease V2 from 0 V to -2.5 V momentarily (within 10 μs). The
time after V2 becomes the charger detection voltage (V_CHA) until V_CO goes "L" is the abnormal charge current detection
delay time. The abnormal charge current detection delay time has the same value as the overcharge detection delay
time.
Seiko Instruments Inc.
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