S-8243A Datasheet, PDF (11/34 Pages) Seiko Instruments Inc – BATTRY PROTECTION IC FOR 3-SERIAL OR 4-SERIAL CELL PACK

Rev.2.4_00
BATTERY PROTECTION IC FOR 3-SERIAL OR 4-SERIAL CELL PACK
S-8243A/B Series
Table 7 (2/2)
Item
INPUT CURRENT
Current consumption at not
monitoring V_BATOUT
Current consumption at power
down
Current for VCn at not monitoring
V_BATOUT (n=1, 2, 3)
Current for VC1 at monitoring of
V_BATOUT
Current for VC2 at monitoring of
V_BATOUT
Current for VC3 at monitoring of
V_BATOUT
Current for CTL1 at Low
Current for CTLn at High
n=2, 3, 4
Current for CTLn at Low
n=2, 3, 4
OUTPUT CURRENT
Leak current COP
Sink current COP
Source current DOP
Sink current DOP
Source current V_BATOUT
Sink current V_BATOUT
Symbol
Remarks
I_OPE V1=V2=V3=V4=3.5 V, V_MP=V_DD
I_PDN V1=V2=V3=V4=1.5 V, V_MP=V_SS
I_VCnN
V1=V2=V3=V4=3.5 V
I_VC1
V1=V2=V3=V4=3.5 V
I_VC2
V1=V2=V3=V4=3.5 V
I_VC3 V1=V2=V3=V4=3.5 V, V_CTL1=0 V
I_CTL1L V1=V2=V3=V4=3.5 V, V_CTL1=0 V
I_CTLnH
V_CTLn=V_OUT
I_CTLnL
V_CTLn=0 V
I_COH
I_COL
I_DOH
I_DOL
I_VBATH
I_VBATL
V_COP=24 V
V_COP=V_SS+0.5 V
V_DOP=V_DD−0.5 V
V_DOP=V_SS+0.5 V
V_BATOUT=V_DD−0.5 V
V_BATOUT=V_SS+0.5 V
Min.
⎯
⎯
−0.3
⎯
⎯
⎯
−0.4
⎯
−5
⎯
10
10
10
100
100
Typ.
65
⎯
0
3.2
2.0
1.0
−0.2
2.5
−2.5
⎯
⎯
⎯
⎯
⎯
⎯
Max. Unit Test circuit
120
μA
1
0.1
μA
1
0.3
μA
3
10.4
μA
3
7.2
μA
3
4.0
μA
3
⎯
μA
5
5
μA
9
⎯
μA
9
0.1
μA
9
⎯
μA
9
⎯
μA
9
⎯
μA
9
⎯
μA
9
⎯
μA
9
Applied to S-8243BAEFT and S-8243BAFFT
Item
Symbol
DELAY TIME
Overcharge detection delay time
t_CU
Overdischarge detection delay
time
t_DL
Overcurrent detection delay time 1 t_lOV1
Overcurrent detection delay time 2 t_lOV2
Overcurrent detection delay time 3 t_lOV3
Conditions
C_CT=0.1 μF
C_DT=0.1 μF
C_DT=0.1 μF
⎯
⎯
Min.
Typ.
Max. Unit Test circuit
0.5
1.0
1.5
s
5
50
100
150
ms
5
5
10
15
ms
5
1.5
2.5
4.0
ms
4
100
300
600
μs
4
Applied to S-8243BADFT
Item
Symbol
Conditions
Min.
Typ.
Max. Unit Test circuit
DELAY TIME
Overcharge detection delay time
t_CU
Overdischarge detection delay
time
t_DL
C_CT=0.1 μF
C_DT=0.1 μF
0.5
1.0
1.5
s
5
55.5
111
222
ms
5
Overcurrent detection delay time 1 t_lOV1
Overcurrent detection delay time 2 t_lOV2
Overcurrent detection delay time 3 t_lOV3
C_DT=0.1 μF
⎯
⎯
3.31
6.62
13.2
ms
5
1.5
2.5
4.0
ms
4
100
300
600
μs
4
*1. Temperature coefficient for detection and release voltage is applied to overcharge detection voltage n, overcharge release voltage n
overdischarge detection voltage n, and overdischarge release voltage n.
*2. Temperature coefficient for overcurrent detection voltage is applied to over current detection voltage 1 and 2.
Seiko Instruments Inc.
11