HYB514175BJ-50- Datasheet, PDF (8/22 Pages) Siemens Semiconductor Group – 256k x 16-Bit EDO-DRAM

HYB 514175BJ/BJL-50/-55/-60
256k × 16 EDO-DRAM
AC Characteristics ^{(cont’d)5, 6}
T_A = 0 to 70 °C; V_SS = 0 V; V_CC = 5 V ± 10 %, t_T = 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-55
-60
min. max. min. max. min. max.
Read-Modify-Write Cycle
Read-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
OE command hold time
t_RWC
t_RWD
t_CWD
t_AWD
t_OEH
118 –
64 –
27 –
39 –
10 –
122 –
69 –
27 –
39 –
10 –
138 –
77 –
32 –
47 –
13 –
ns
ns ¹⁵
ns ¹⁵
ns ¹⁵
ns
Hyper Page Mode (EDO) Cycle
Hyper page mode cycle time
t_HPC 20 – 20 – 25 – ns
CAS precharge time
t_CP
8 – 8 – 10 – ns
Access time from CAS precharge
t_CPA
–
27 –
27 –
32 ns ⁷
Output data hold time
t_COH 5 – 5 – 5 – ns
RAS pulse width in hyper page mode t_RAS 50 200k 55 200k 60 200k ns
RAS hold time from CAS precharge t_RHCP 27 – 27 – 32 – ns
Hyper Page Mode (EDO) Read-Modify-Write Cycle
Hyper page mode read/write cycle t_PRWC 58 – 58 – 68 – ns
time
CAS precharge to WE delay time
t_CPWD 41 – 41 – 49 – ns
CAS-before-RAS Refresh Cycle
CAS setup time
CAS hold time
RAS to CAS precharge time
Write to RAS precharge time
Write to RAS hold time
t_CSR
5
–
5
–
5
–
ns
t_CHR 10 – 10 – 10 – ns
t_RPC
5
–
5
–
5
–
ns
t_WRP 10 – 10 – 10 – ns
t_WRH 10 – 10 – 10 – ns
CAS-before-RAS Counter Test Cycle
CAS precharge time
t_CPT
35 –
35 –
40 –
ns
Semiconductor Group
8
1998-10-01