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HYB514175BJ-50- Datasheet, PDF (16/22 Pages) Siemens Semiconductor Group – 256k x 16-Bit EDO-DRAM
HYB 514175BJ/BJL-50/-55/-60
256k × 16 EDO-DRAM
VIH
RAS
VIL
UCAS VIH
LCAS VIL
tASR
VIH
Address
VIL
VIH
WE
VIL
VIH
OE
VIL
I/O
VIH
(Inputs) VIL
I/O
VOH
(Outputs) VOL
t RASP
t CSH
t CP
t PRWC
t RCD
t CAS
t CAS
t RSH
t CAS
t RAD
t RAH
t CAH
tASC
Row
Column
t RWD
t RCS
t CWD
t CWL
tCAH
t ASC
Column
t CPWD
t CWD
t CWL
t RAL
tCAH
tASC
Column
t CPWD
t CWD
t RWL
t CWL
t AWD
t AA
t OEA
t WP
t OEH
t AWD
t OEA
tWP
t OEH
t AWD
t OEA
t WP
t OEH
t CLZ
t DZC
t DZO
t CAC
t RAC
t ODD
t CLZ
t CPA
tDZC
Data IN
t DS
t OEZ
tDH
tAA
t ODD
t CLZ
t CPA
t DZC
Data IN
t DH
t DS
t OEZ
t CAC
t AA
t ODD
Data IN
t DH
t DS
t OEZ
Data
Data
Data
OUT
OUT
OUT
t RP
t CRP
t ASR
Row
"H" or "L"
SPT03131
Hyper Page Mode (EDO) Late Write and Read-Modify-Write Cycles
Semiconductor Group
16
1998-10-01