HYB514175BJ-50- Datasheet, PDF (4/22 Pages) Siemens Semiconductor Group – 256k x 16-Bit EDO-DRAM

HYB 514175BJ/BJL-50/-55/-60
256k × 16 EDO-DRAM
WE
UCAS
LCAS
&
No.2 Clock
Generator
9
Column
Address
Buffers (9)
A0
A1
Refresh
A2
Controller
A3
A4
A5
Refresh
A6
Counter (9)
A7
9
A8
9
Row
Address
Buffers (9)
RAS
No.1 Clock
Generator
Block Diagram
Semiconductor Group
I/O1 I/O2 ^{. . .} I/O16
. . ..
Data In
Buffer
16
Data Out
Buffer
OE
16
9
Column
Decoder
Sense Amplifier
16
I/O Gating
512
x 16
9
...
Row
Decoder
512
...
Memory Array
512 x 512 x 16
Substrate Bias
Generator
V _CC
V _SS
SPB02827
4
1998-10-01