HYB514175BJ-50- Datasheet, PDF (21/22 Pages) Siemens Semiconductor Group – 256k x 16-Bit EDO-DRAM

HYB 514175BJ-50/-55/-60
256k × 16 EDO-DRAM
Read Cycle
V_IH
RAS
V_IL
UCAS
V_IH
LCAS
V_IL
V_IH
Address
V_IL
V_IH
WE
V_IL
V_IH
OE
V_IL
I/O
V_IH
(Inputs) _VIL
I/O
V_OH
(Outputs) _VOL
Write Cycle
V_IH
WE
V_IL
V_IH
OE
V_IL
I/O
V_IH
(Inputs) _VIL
I/O
V_OH
(Outputs) _VOL
t _CHR
t _CSR
t _WRP
t _WRH
t _WRP
t _WRH
"H" or "L"
t _RAS
t _RP
t _RSH
t _CP
t _CAS
t _RAL
t _CAH
t _ASC
Column
t _AA
t _CAC
t _RCS
t _OEA
t_ASR
Row
t _RRH
t _RCH
t _DZC
t _DZO
t _CLZ
t _WCS
t _RWL
t _CWL
t _WCH
t _ODD
t _CDD
t _OFF
t _OEZ
Data OUT
t _DH
t _DS
Data IN
Hi Z
SPT03055
CAS-Before-RAS Refresh Counter Test Cycle
Semiconductor Group
21
1998-10-01