HYB514175BJ-50- Datasheet, PDF (7/22 Pages) Siemens Semiconductor Group – 256k x 16-Bit EDO-DRAM

HYB 514175BJ-50/-55/-60
256k × 16 EDO-DRAM
AC Characteristics ^{(cont’d)5, 6}
T_A = 0 to 70 °C; V_SS = 0 V; V_CC = 5 V ± 10 %, t_T = 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-55
-60
min. max. min. max. min. max.
RAS hold time
CAS hold time
CAS to RAS precharge time
Transition time (rise and fall)
Refresh period
t_RSH 13 – 13 – 15 – ns
t_CSH 40 – 45 – 50 – ns
t_CRP
5
–
5
–
5
–
ns
t_T
1 50 1 50 1 50 ns ⁷
t_REF
–
16 –
16 –
16 ms
Read Cycle
Access time from RAS
t_RAC
Access time from CAS
t_CAC
Access time from column address t_AA
OE access time
t_OEA
Column address to RAS lead time t_RAL
Read command setup time
t_RCS
Read command hold time
t_RCH
Read command hold time ref. to RAS t_RRH
CAS to output in low-Z
t_CLZ
Output buffer turn-off delay from CAS t_OFF
Output buffer turn-off delay from OE t_OEZ
Data to OE low delay
t_DZO
CAS high to data delay
t_CDD
OE high to data delay
t_ODD
– 50 – 55 – 60 ns ^{8, 9}
– 13 – 13 – 15 ns ^{8, 9}
– 25 – 25 – 30 ns ^{8, 10}
– 13 – 13 – 15 ns
25 – 25 – 30 – ns
0 – 0 – 0 – ns
0 – 0 – 0 – ns ¹¹
0 – 0 – 0 – ns ¹¹
0 – 0 – 0 – ns ⁸
0 13 0 13 0 15 ns ¹²
0 13 0 13 0 15 ns ¹²
0 – 0 – 0 – ns ¹³
10 –
10 –
10 –
10 –
13 –
13 –
ns ¹⁴
ns ¹⁴
Write Cycle
Write command hold time
Write command pulse width
Write command setup time
Write command to RAS lead time
Write command to CAS lead time
Data setup time
Data hold time
Data to CAS low delay
t_WCH
t_WP
t_WCS
t_RWL
t_CWL
t_DS
t_DH
t_DZC
8–
8–
0–
13 –
13 –
0–
8–
0–
8–
8–
0–
13 –
13 –
0–
8–
0–
10 –
10 –
0–
15 –
15 –
0–
10 –
0–
ns
ns
ns ¹⁵
ns
ns
ns ¹⁶
ns ¹⁶
ns ¹³
Semiconductor Group
7
1998-10-01