HYB514175BJ-50- Datasheet, PDF (5/22 Pages) Siemens Semiconductor Group – 256k x 16-Bit EDO-DRAM

HYB 514175BJ-50/-55/-60
256k × 16 EDO-DRAM
Absolute Maximum Ratings
Operating temperature range ....................................................................................... 0 to + 70 °C
Storage temperature range.................................................................................... – 55 to + 150 °C
Input/output voltage ....................................................................................................... – 1 to + 6 V
Power supply voltage..................................................................................................... – 1 to + 6 V
Data out current (short circuit) ............................................................................................... 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
DC Characteristics
T_A = 0 to 70 °C; V_SS = 0 V; V_CC = 5 V ± 10 %, t_T = 2 ns
Parameter
Symbol
Limit Values
min.
max.
Unit Test
Condition
Input high voltage
V_IH
Input low voltage
V_IL
Output high voltage (I_OUT = – 5.0 mA)
V_OH
Output low voltage (I_OUT = 4.2 mA)
V_OL
Input leakage current, any input
I_I(L)
(0 V < V_IN < 7 V, all other inputs = 0 V)
Output leakage current
I_O(L)
(DO is disabled, 0 V < V_OUT < V_CC)
Average V_CC supply current
I_CC1
-50 version
-55 version
-60 version
2.4
– 1.0
2.4
–
– 10
– 10
–
V_CC + 0.5 V ¹
0.8
V
1
–
V
1
0.4
V
1
10
µA ¹
10
µA ¹
200
mA ^{2, 3, 4}
190
170
Standby V_CC supply current
(RAS = LCAS = UCAS = WE = V_IH)
I_CC2
–
Average V_CC supply current during
RAS-only refresh cycles
I_CC3
–
-50 version
-55 version
-60 version
2
mA
200
mA ^{2, 4}
190
170
Average V_CC supply current during
hyper page mode (EDO) operation
I_CC4
–
-50 version
-55 version
-60 version
2, 3, 4
190
mA
180
170
Semiconductor Group
5
1998-10-01