HYB514175BJ-50- Datasheet, PDF (2/22 Pages) Siemens Semiconductor Group – 256k x 16-Bit EDO-DRAM

HYB 514175BJ/BJL-50/-55/-60
256k × 16 EDO-DRAM
The HYB 514175BJ is the new generation dynamic RAM organized as 262 144 words by 16-bit.
The HYB 514175BJ utilizes CMOS silicon gate process as well as advanced circuit techniques to
provide wide operation margins, both internally and for the system user. Multiplexed address inputs
permit the HYB 514175BJ to be packed in a standard plastic 400 mil wide P-SOJ-40-1 package.
This package size provides high system bit densities and is compatible with commonly used
automatic testing and insertion equipment. System oriented features include single + 5 V (± 10 %)
power supply, direct interfacing with high performance logic device families such as Schottky TTL.
Ordering Information
Type
Ordering Code
HYB 514175BJ-50 Q67100-Q2072
HYB 514175BJ-55 Q67100-Q2100
HYB 514175BJ-60 Q67100-Q2073
Package
P-SOJ-40-1 400 mil
P-SOJ-40-1 400 mil
P-SOJ-40-1 400 mil
Description
50 ns 256k × 16 EDO-DRAM
55 ns 256k × 16 EDO-DRAM
60 ns 256k × 16 EDO-DRAM
Truth Table
RAS LCAS UCAS WE
OE
I/O1 - I/O8 I/O9 - I/O16 Operation
H
H
H
H
H
High-Z
High-Z
Standby
L
H
H
H
H
High-Z
High-Z
Refresh
L
L
H
H
L
Dout
High-Z
Lower byte read
L
H
L
H
L
High-Z
Dout
Upper byte read
L
L
L
H
L
Dout
Dout
Word read
L
L
H
L
H
Din
Don't care Lower byte write
L
H
L
L
H
Don't care Din
Upper byte write
L
L
L
L
H
Din
Din
Word write
L
L
L
H
H
High-Z
High-Z
−
Pin Names
A0 - A8
RAS
UCAS, LCAS
WE
OE
I/O1 -I/O16
V_CC
V_SS
N.C.
Address Inputs
Row Address Strobe
Column Address Strobe
Read/Write Input
Output Enable
Data Input/Output
Power Supply (+ 5 V)
Ground (0 V)
No Connection
Semiconductor Group
2
1998-10-01