HYB3164160T Datasheet, PDF (4/26 Pages) Siemens Semiconductor Group – 4M x 16-Bit Dynamic RAM

HYB 3164(5)160T-50/-60
4M x 16-DRAM
TRUTH TABLE
FUNCTION
Standby
Read:Word
Read:Lower Byte
Read:Upper Byte
Write:Word
(Early-Write)
Write:Lower Byte
(Early-Write)
Write:Upper Byte
(Early Write)
Read-Modify-
Write
Fast Page Mode
Read (Word)
RAS LCAS UCA
S
H H-X H-X
LL
H
LL
H
LH
L
LL
L
LL
H
LH
L
LL
L
1st L
Cycle
H-L H-L
WRIT
E
X
H
H
H
L
L
L
H-L
H
OE ROW
ADD
XX
L ROW
L ROW
L ROW
X ROW
X ROW
X ROW
L - H ROW
L ROW
COL I/O1-
ADD I/O16
X
High Impedance
COL Data Out
COL Lower Byte:Data Out
Upper-Byte:High-Z
COL Lower Byte:High-Z
Upper Byte:Data Out
COL Data In
COL Lower Byte:Data Out
Upper-Byte:High-Z
COL Lower Byte:High-Z
Upper Byte:Data Out
COL Data Out, Data In
COL Data Out
Fast Page Mode 2nd L
Read (Word)
Cycle
H-L H-L H
L n/a COL Data Out
Fast Page Mode 1st L
Early Write(Word) Cycle
H-L H-L L
X ROW COL Data In
Fast Page Mode 2nd L
Early Write(Word) Cycle
H-L H-L L
X n/a COL Data In
Fast Page Mode 1st L
RMW
Cycle
H - L H - L H - L L - H ROW COL Data Out, Data In
Fast Page Mode 2st L
RMW
Cycle
H - L H - L H - L L - H n/a
COL Data Out, Data In
RAS only refresh
CAS-before-RAS
refresh
Test Mode Entry
Hidden Refresh
(Read)
Hidden Refresh
(Write)
LH
H
X
H-L L
L
H
H-L L
L
L
L-H- L
L
H
L
L-H- L
L
L
L
X ROW n/a High Impedance
XX
n/a High Impedance
XX
n/a High Impedance
L ROW COL Data Out
X ROW COL Data In
Semiconductor Group
8