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HYB3164160T Datasheet, PDF (24/26 Pages) Siemens Semiconductor Group – 4M x 16-Bit Dynamic RAM
◁
HYB 3164(5)160T-50/-60
4M x 16-DRAM
V IH
RAS
V IL
V IH
CAS
V IL
V IH
Address
V IL
Read Cycle
WRITE
V IH
V IL
OE
V IH
V IL
I/O1-I/O16
V IH
(Inputs)
V IL
I/O1-I/O16
VOH
(Outputs)
VOL
Write Cycle
V IH
WRITE
V IL
OE
V IH
V IL
I/O1-I/O16
V IH
(Inputs)
V IL
I/O1-I/O16
V
(Outputs)
IH
V IL
Read-Modify-Write Cycle
V IH
WRITE
V IL
V IH
OE
V IL
I/O1-I/O16
V IH
(Inputs)
V IL
I/O1-I/O16
VOH
(Outputs)
VOL
tCSR
tCHR
tWRP
tWRH
tWRP
tWRH
tCPT
tRAS
tRSH
tCAS
tASC
tCAH
tRAL
Column
Address
tRCS
tAAtCAC
tRP
tASR
Row
Address
tRRH
tRCH
tOEA
tDZC
tDZO
tCDD
tODD
tWCS
tOFF
tCLZ
tOEZ
Valid Data Out
tRWL
tCWL
tWCH
tWRP
tWRH
tDS
tDH
Valit Data In
HI-Z
tRCS
tAWD
tCWD
tCAC
tAA
tOEA
tCWL
tRWL
tWP
tOEH
tDZC
tDZO
tCLZ
tCAC
tDS
tDH
Data In
tODD
tOEZ
HI-Z
D.Out
HI-Z
CAS-Before-RAS Refresh Counter Test Cycle
Semiconductor Group
28
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