HYB3164160T Datasheet, PDF (15/26 Pages) Siemens Semiconductor Group – 4M x 16-Bit Dynamic RAM

HYB 3164(5)160T-50/-60
4M x 16-DRAM
V
RAS
IH
VIL
UCAS
V
IH
LCAS
VIL
V
IH
Address _VIL
V
IH
WRITE
VIL
V
IH
OE
VIL
V
I/O1-I/O16 ^IH
(Inputs) _VIL
V
I/O1-I/O16 ^OH
(Outputs) _VOL
tRC
tRAS
tRP
tRCD
tCSH
tRSH
tCAS
tRAD
tASR
tASC
tRAL
tCAH
Row
Address
t_RAH
Column
Address
tCWL
tRWL
tWP
tCRP
tASR
.
Row
Address
tOEH
tDZO
tDZC
tODD
tDS ^tDH
tOEZ
tCLZ
tOEA
Hi-Z
Valid Data
Hi-Z
“H” or “L”
Write Cycle (OE Controlled Write)
Semiconductor Group
19