HYB3164160T Datasheet, PDF (19/26 Pages) Siemens Semiconductor Group – 4M x 16-Bit Dynamic RAM

HYB 3164(5)160T-50/-60
4M x 16-DRAM
V
IH
RAS
VIL
UCAS
V
IH
LCAS
VIL
tRASP
tRCD
tPC
tCAS
tCP
tCAS
tRAH
tASR
V
IH
Address
VIL
Row
Addr
tRAD
V
IH
WRITE _VIL
tCAH
tASC
Column
Address
tCWL
tWCS
tWCH
tWP
tASC ^tCAH
Column
Address
tCWL
tWCS
tWCH
tWP
tRP
tRSH
tCAS
tCRP
tRAL
tCAH
tASC
Column
Address
tCWL
tR_tWWLCS
tWCH
tWP
tASR
Column
Address
V
IH
OE
VIL
V
I/O1-I/O16 ^IH
(Inputs) _VIL
V
I/O1-I/O16 ^OH
(Outputs) _VOL
tDH
tDS
Valid
Data In
“H” or “L”
Fast Page Mode Early Write Cycle
Semiconductor Group
tDH
tDS
Valid
Data In
tDH
tDS
Valid
Data In
HI-Z
23