HYB3164160T Datasheet, PDF (11/26 Pages) Siemens Semiconductor Group – 4M x 16-Bit Dynamic RAM

HYB 3164(5)160T-50/-60
4M x 16-DRAM
AC Characteristics (cont’d)(note: 6,7,8)
T_A = 0 to 70 ˚C,V_CC = 3.3 ± 0.3V
Parameter
Symbol
HYB
HYB
Unit Note
3164(5)16T-50 3164(5)16T-60
min. max. min. max.
Fast Page Mode Read-Modify-Write
Cycle
Fast page mode read-write cycle time t_PRWC
71
–
CAS precharge to WE
t_CPWD
48
–
CAS-before-RAS refresh cycle
CAS setup time
t_CSR
CAS hold time
t_CHR
RAS to CAS precharge time
t_RPC
Write to RAS precharge time
t_WRP
Write hold time referenced to RAS
t_WRH
5
–
10
–
5
–
10
–
10
–
CAS-before-RAS counter test cycle
CAS precharge time
t_CPT
25
–
Self Refresh Cycle
RAS pulse width
RAS precharge time
CAS hold time
t_RASS
t_RPS
t_CHS
100k –
90
–
-50 –
80
–
55
–
5
–
10
–
5
–
10
–
10
–
30
–
100k –
110 –
-50 –
ns
ns
ns
ns
ns
ns
ns
ns
ns 17
17
ns 17
Semiconductor Group
15