HYB3164160T Datasheet, PDF (14/26 Pages) Siemens Semiconductor Group – 4M x 16-Bit Dynamic RAM

HYB 3164(5)160T-50/-60
4M x 16-DRAM
V
RAS
IH
VIL
UCAS
V
IH
LCAS
VIL
V
IH
Address
VIL
V
IH
WRITE
VIL
V
IH
OE
VIL
V
I/O1-I/O16 ^IH
(Inputs) _VIL
tRC
tRAS
tCSH
tRCD
tRSH
tCAS
tRAD
tASR
tASC
tRAL
tCAH
Row
Address
t_RAH
Column
Address
tWCS
tCWL
t WP
tWCH
tRWL
tDS
tDH
Valid Data In
V
I/O1-I/O16 ^OH
(Outputs) _VOL
Hi Z
“H” or “L”
Write Cycle (Early Write)
Semiconductor Group
18
tRP
tCRP
tASR
.
Row
Address