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| DS_S1M8837 Datasheet, PDF (9/29 Pages) Samsung semiconductor – FRACTIONAL-N RF/INTEGER-N IF DUAL PLL | |||
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FRACTIONAL-N RF/INTEGER-N IF DUAL PLL
S1M8836/37
ELECTRICAL CHARACTERISTICS (Continued)
(VDD=3.0V, Vp=3.0V, Ta = 25°C, unless otherwise specified.)
Characteristic
Symbol
Test Conditions
Charge Pump Outputs: CPoRF, CPoIF
RF Charge Pump Output
Current
ICPRF
SOURCE_min
VCP=VP/2,
RF_CP_WORD=0000
ICPRF-
SINK_min
VCP=VP/2,
RF_CP_WORD=0000
ICPRF-
SOURCE_max
VCP=VP/2,
RF_CP_WORD=1111
ICPRF-
SINK_max
VCP=VP/2,
RF_CP_WORD=1111
IF Charge Pump Output Current
ICPRF
VCP=VP/2,CP_GAIN_8=0
SOURCE_min
ICPRF
VCP=VP/2,CP_GAIN_8=0
SINK_min
ICPRF
VCP=VP/2,CP_GAIN_8=1
SOURCE_max
ICPRF
VCP=VP/2,CP_GAIN_8=1
SINK_max
Charge Pump Leakage Current
ICPL
0.5V ⤠VCP ⤠VP-0.5V
Sink vs. Source Mismatch
ICP-SINK vs
ICP-SOURCE
VCP=VP/2
Output Current Magnitude
Variations. Voltage
ICP VS VCP 0.5V ⤠VCP ⤠VP-0.5V
Output Current vs. Temperature ICP VS Ta
VCP=VP/2
Operating Frequency, Input Sensitivity (Programmable Divider, PFD)
RF Operating
Frequency
S1M8837
finRF
Fractional-N mode
(fosc=19.68MHz, RF R=2)
S1M8836
Fractional-N mode
(fosc=19.68MHz, RF R=2)
IF Operating Frequency
finIF
VDD=3.0V
Reference Oscillator Input
Frequency
OSCin
Phase Detector Operating
fPD
Frequency
RF Input Sensitivity
PfinRF
VDD=3.0V
VDD=4.0V
IF Input Sensitivity
PfinIF
VDD=2.7V to 4.0V
Reference Oscillator Input
Sensitivity
VOSCin
Min.
-2.5
0.5
0.25
45
2
-15
-10
-10
0.5
Typ.
-50
+50
-800
+800
-100
+100
-800
+800
3
10
10
Max.
+2.5
10
15
2.5
1.0
520
40
10
0
0
0
VDD
Unit
µA
µA
µA
µA
µA
µA
µA
µA
nA
%
%
%
GHz
GHz
MHz
MHz
MHz
dBm
dBm
dBm
VPP
9
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